By Yogesh B. Gianchandani, Osamu Tabata, Hans Zappe
Accomplished Microsystems, is a brand new 3-volume reference paintings on Microelectromechanical platforms (MEMS). The microsystems box has elevated to include a bunch of applied sciences, and microelectronics has now been joined through micro-mechanics, micro-fluidics and micro-optics to permit the fabrication of complicated, multi- practical built-in microsystems. At over 2000 pages, finished Microsystems represents the authoritative fundamental reference resource on microsystems. It addresses the necessity for an outline of the applied sciences and services on hand during this hugely interdisciplinary and dynamically-growing engineering box. accomplished Microsystems, presents an exhaustive assessment of the wide variety of issues which contain the microsystems box, together with, layout and fabrics, fabrication and packaging, optical platforms, chemical and organic structures, actual sensors, actuation, electronics for MEMS and business purposes. each article within the paintings has been commissioned by means of a panel of across the world famous editors and written by means of an said specialist in anybody of numerous disciplines. The articles supply a concise assessment of a specific element of the microsystems box and are observed via vast bibliographies, cross-referencing and indexes, bettering the price of the textual content. via guiding the consumer to the main suitable extra studying in the ever-expanding on hand literature. a lot care has been given to prevent overlap and to supply consistency widespread and contents. * the 1st and prime accomplished reference on Microelectromechanical platforms (MEMS)* Unifies confirmed examine from well-known assets in an simply obtainable layout* presents a vital reference resource for either lecturers and execs within the box
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Additional info for Comprehensive Microsystems, Three-Volume Set
Phys. Lett. 66, 2746–8 Muhlstein C L, Brown S B, Ritchie R O 2001a High-cycle fatigue of single-crystal silicon thin films. JMEMS 10, 593–600 Muhlstein C L, Brown S B, Ritchie R O 2001b High-cycle fatigue and durability of polycrystalline silicon thin films in ambient air. Sens. Actuators A 94, 177–88 Muhlstein C L, Stach E A, Ritchie R O 2002 A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading. Acta Mater.
In thin-film microstructures, the internal (residual) stress is one of the important properties of the materials. The internal stress consists of the thermal stress and the intrinsic stress. The former is generated by the mismatch of the coefficient of thermal expansion (CTE) between the film and the substrate. The latter mainly originates from the reaction of the film formation process. The internal stress of SCS is almost negligible. However, many researches showed that the doping of SCS causes internal stresses and there are several different results and different explanations for the source of the internal stress.
IEEE Int. Conf. Solid-State Sensors and Actuators, San Francisco, CA, USA, pp. 957–60 Park S, Kwak D, Ko H, Song T, Cho D 2005 Selective silicon-oninsulator (SOI) implant: A new micromachining method without footing and residual stress. J. Micromech. Microeng. 15, 1607–13 Pertersen K E 1978 Dynamic micromechanics on silicon: Techniques and devices. IEEE Trans. Electron Devices ED-25, 1241–50 Petersen K E 1982 Silicon as a mechanical materials. Proc. IEEE 70, 420–57 Pierron O N, Muhlstein C L 2005 The extended range of reaction-layer fatigue susceptibility of polycrystalline silicon thin films.